Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHLZ14S-GE3

The IRLZ14S and SiHLZ14S are N-channel MOSFETs designed for high-efficiency switching applications, housed in a D2PAK (TO-263) surface-mount package measuring 10.67 mm x 9.65 mm with a height of 4.83 mm. The device features a 60 V drain-source breakdown voltage, a maximum on-resistance of 0.28 Ω at VₓS = 4 V and Iₕ = 5 A, and a continuous drain current of 7.2 A at 100 °C. It operates with a gate-source threshold voltage between 1.0 V and 2.0 V, and supports a maximum junction temperature of 175 °C. The package is RoHS-compliant and halogen-free in the SiHLZ14S-GE3 variant, and meets JEDEC TO-263AB standards. Thermal resistance is 3.5 °C/W junction-to-case and up to 40 °C/W junction-to-ambient on a 1" PCB. The device is rated for single-pulse avalanche energy up to 68 mJ and has a peak diode recovery dv/dt of 4.5 V/ns.