Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC Product overview: SIHG33N60EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG33N60EF-GE3 can be used for catalog matching and distributor lookup.
N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AC
MOSFET N-CH 600V 33A TO247AC
Manufacturer: Vishay Siliconix
Win Source Part Number: 794398-SIHG33N60EF-G
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Family Name: SiHG33N60EF
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247AC
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3454pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 278W (Tc)
Rds On (Maximum) @ Id, Vgs: 98 mOhm @ 16.5A, 10V
Alternative Parts (Cross-Reference): IPW60R099CPXK; IPW60R099CPFKSA1 ; IPW60R099CP; IPW60R099CS;
Introduction Date: November 17, 2014
ECCN: EAR99
Estimated EOL Date: 2031
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
MOSFET 600V 33A w/Fast Diode TO-247AC
MOSFET, N CHANNEL, 600V, 33A, TO-247AC-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:-RoHS Compliant: Yes
MOSFET N-CH 600V 33A TO247AC
MOSFET 600V Vds 30V Vgs TO-247AC
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHG33N60EF-GE3 | 742-SIHG33N60EF-GE3-ND | SIHG33N60EF-GE3 | 794398-SIHG33N60EF-GE3 | 1780893 | 31Y6761 | SIHG33N60EF-GE3 | SIHG33N60EF-GE3 |
| Product Name | 600V 33A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG33N60EF-GE3 | MOSFETs | Mosfet, N Channel, 600V, 33A, To-247Ac-3; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | 600 volts | 600 volts | ||||||
| PD | 278000 milliwatts | 278000 milliwatts | 278000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel |
