The SIHG24N65E-E3 is an N-Channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage (V_DS) of 650 V and a continuous drain current (I_D) rating of 24 A at a case temperature of 25 ¬8C. It has a low on-state resistance (R_DS(on)) of 0.145 Oc at a gate-source voltage (V_GS) of 10 V, which contributes to reduced conduction losses. The total gate charge (Q_g) is specified at a maximum of 122 nC, indicating low input capacitance and efficient switching performance. This MOSFET is housed in a TO-247AC package, suitable for through-hole mounting, and is rated for a maximum power dissipation of 250 W. The operating temperature range extends from -55 ¬8C to +150 ¬8C, making it versatile for various applications. It is particularly suitable for use in server and telecom power supplies, switch mode power supplies (SMPS), and industrial applications such as motor drives and renewable energy systems. The device is also avalanche energy rated, enhancing its reliability in demanding environments.
Manufacturer: Vishay
Win Source Part Number: 933789-SIHG24N65E-E3
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 24A (Tc) 250W (Tc) Through Hole TO-247AC
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: SIHG24
Categories: Discrete Semiconductor Products
Case / Package: TO-247AC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
N-Channel 650V 24A (Tc) 250W (Tc) Through Hole TO-247AC
MOSFET N-CH 650V 24A TO247AC
MOSFET N-CH 650V 24A TO247AC
MOSFET 650V Vds 30V Vgs TO-247AC
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 933789-SIHG24N65E-E3 | SIHG24N65E-E3-ND | SIHG24N65E-E3 | 880-SIHG24N65E-E3 | SIHG24N65E-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG24N65E-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 650V 24A TO247AC | MOSFET |
| Polarity | N-Channel | N-Channel | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-247; SOT3; TO-247AC | TO-247; TO-247-3 | 2740 pF @ 100 V | ||
| Packing Method | Tube; Tube | Tube; Tube |
