Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG23N60E-GE3 SIHG23N60E-GE3

Manufacturer: Vishay
Win Source Part Number: 872497-SIHG23N60E-GE3
Series: E
Operating Temperature Range: -55°C ~ 150°C (TA)
Features: N-Channel 600 V 23A (Tc) 227W (Tc) Through Hole TO-247AC
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: SIHG23
Categories: Discrete Semiconductor Products
Case / Package: TO-247AC
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095

MOSFET 650V 158mOhms@10V 23A N-Channel Product overview: SIHG23N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 10V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 10V, 23A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIHG23N60E-GE3 can be used for catalog matching and distributor lookup.

N-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-247AC