Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHFR9310TR-GE3

Description
P-Channel 400V 1.8A (Tc) 50W (Tc) Surface Mount TO-252AA
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Description
P-Channel 400V 1.8A (Tc) 50W (Tc) Surface Mount TO-252AA
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Datasheet
Datasheet Summary
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The 1277902-SIHFR9310TR-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for surface mounting in applications requiring efficient power management. It features a maximum drain-source voltage (Vds) of -400 V and a continuous drain current rating of -1.8 A at a case temperature of 25 ¬8C. The on-resistance (Rds(on)) is specified at 7.0 Oc when the gate-source voltage (Vgs) is -10 V and the drain current is -1.1 A. This MOSFET has a maximum power dissipation of 50 W and operates within a temperature range of -55 ¬8C to +150 ¬8C. The total gate charge (Qg) is 13 nC at Vgs of -10 V, indicating relatively low switching losses. The device is packaged in a DPAK (TO-252) format, suitable for various soldering techniques. It is also halogen-free and lead-free, aligning with modern environmental standards. Engineers considering this component should evaluate its specifications against their project requirements, particularly in terms of voltage, current handling, and thermal performance.

Datasheet Summary
Powered by GS/AI

The 1277902-SIHFR9310TR-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for surface mounting in applications requiring efficient power management. It features a maximum drain-source voltage (Vds) of -400 V and a continuous drain current rating of -1.8 A at a case temperature of 25 ¬8C. The on-resistance (Rds(on)) is specified at 7.0 Oc when the gate-source voltage (Vgs) is -10 V and the drain current is -1.1 A. This MOSFET has a maximum power dissipation of 50 W and operates within a temperature range of -55 ¬8C to +150 ¬8C. The total gate charge (Qg) is 13 nC at Vgs of -10 V, indicating relatively low switching losses. The device is packaged in a DPAK (TO-252) format, suitable for various soldering techniques. It is also halogen-free and lead-free, aligning with modern environmental standards. Engineers considering this component should evaluate its specifications against their project requirements, particularly in terms of voltage, current handling, and thermal performance.

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - 742-SIHFR9310TR-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHFR9310TR-GE3TR-ND
Single FETs, MOSFETs 742-SIHFR9310TR-GE3TR-ND
P-Channel 400V 1.8A (Tc) 50W (Tc) Surface Mount TO-252AA

P-Channel 400V 1.8A (Tc) 50W (Tc) Surface Mount TO-252AA

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Single FETs, MOSFETs - 742-SIHFR9310TR-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHFR9310TR-GE3CT-ND
Single FETs, MOSFETs 742-SIHFR9310TR-GE3CT-ND
MOSFET P-CH 400V 1.8A DPAK

MOSFET P-CH 400V 1.8A DPAK

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Single FETs, MOSFETs - 742-SIHFR9310TR-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHFR9310TR-GE3DKR-ND
Single FETs, MOSFETs 742-SIHFR9310TR-GE3DKR-ND
MOSFET P-CH 400V 1.8A DPAK

MOSFET P-CH 400V 1.8A DPAK

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277902-SIHFR9310TR-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277902-SIHFR9310TR-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277902-SIHFR9310TR-GE3
Win Source Part Number: 1277902-SIHFR9310TR- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 50W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHFR9310 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277902-SIHFR9310TR-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 400 V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHFR9310
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore
400V 1.8A DPAK MOSFET Transistor
278-SIHFR9310TR-GE3
400V 1.8A DPAK MOSFET Transistor 278-SIHFR9310TR-GE3
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK T/R Product overview: SIHFR9310TR-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 1.8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 1.8A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHFR9310TR-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK T/R Product overview: SIHFR9310TR-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 1.8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 1.8A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHFR9310TR-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -400V Vds 20V Vgs DPAK (TO-252)

MOSFET -400V Vds 20V Vgs DPAK (TO-252)

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHFR9310TR-GE3 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHFR9310TR-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHFR9310TR-GE3
MOSFET P-CH 400V 1.8A DPAK

MOSFET P-CH 400V 1.8A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Acme Chip Technology Co., Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 742-SIHFR9310TR-GE3TR-ND 1277902-SIHFR9310TR-GE3 278-SIHFR9310TR-GE3 SIHFR9310TR-GE3 SIHFR9310TR-GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 400V 1.8A DPAK MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK) Tape and Reel -55degC ~ 150degC (TJ)
MOSFET Operating Mode Enhancement
V(BR)DSS 400 volts
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