Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SB1135R 2SB1135R

The 2SB1135R is a PNP silicon transistor in a TO-220ML package designed for high-current switching applications such as relay drivers and inverters. It has a maximum collector-to-emitter voltage of 50 V, a continuous collector current of 7 A, and a peak pulse collector current of 12 A. The collector-to-emitter saturation voltage is rated at a maximum of 0.4 V at IC = -4 A and IB = -0.4 A. The device features a minimum DC current gain (hFE) of 70 at IC = -1 A and VCE = -2 V, with gain categorized into Q, R, and S bins corresponding to 70-140, 100-200, and 140-280 respectively. The transition frequency is 10 MHz, and the junction temperature rating is 150 °C. The package is micaless and facilitates direct mounting. The part is a variant of the 2SB1135/2SD1668 series with a defined hFE binning specified for the R rank.