Vishay Intertechnology, Inc. MOSFET SIHD7N60ET-GE3

N-channel MOSFET in DPAK (TO-252) package designed for high-voltage switching applications such as server and telecom power supplies, SMPS, and PFC circuits. It has a drain-source voltage rating of 600 V, a maximum on-state resistance of 0.6 Ω at 10 V gate-source voltage, and a continuous drain current of 7 A at 25 °C. The device features a low gate charge of 40 nC, an avalanche energy rating of 43 mJ, and operates within a junction temperature range of -55 °C to +150 °C. It meets RoHS compliance and is lead-free and halogen-free.