Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHD6N80AET1-GE3

The SiHD6N80AE is an N-channel MOSFET designed for high-efficiency power conversion in applications such as server and telecom power supplies, switch mode power supplies, and power factor correction. It is packaged in a DPAK (TO-252) case with dimensions of 6.22 mm max length, 6.73 mm max width, and 10.41 mm max height. The device has a drain-source voltage rating of 800 V, a typical on-state resistance of 0.826 Ω at 10 V gate-source voltage, and a maximum gate charge of 22.5 nC. It features integrated Zener diode ESD protection, avalanche energy rating of 20.3 mJ, and operates over a junction temperature range of -55 °C to +150 °C. The part meets RoHS standards and is lead-free and halogen-free.