Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHD6N62ET1-GE3

Win Source Part Number: 1277770-SIHD6N62ET1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: E
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 620 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHD6N62ET1-GE3DKR,SIHD6N62ET1-GE3CT,SIHD6N62ET1-GE3,SIHD6N62ET1-GE3TR
Base Product Number: SIHD6
Drive Voltage (Max Rds On, Min Rds On): 10V

MOSFET N-CH 620V 6A TO252AA Product overview: SIHD6N62ET1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 620V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 620V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD6N62ET1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 620V 6A (Tc) 78W (Tc) Surface Mount TO-252AA