Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHD3N50DT4-GE3

Description
Win Source Part Number: 1277780-SIHD3N50DT4- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: D Package: Tube Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 69W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHD3 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1277780-SIHD3N50DT4- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: D Package: Tube Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 69W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHD3 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277780-SIHD3N50DT4-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277780-SIHD3N50DT4-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277780-SIHD3N50DT4-GE3
Win Source Part Number: 1277780-SIHD3N50DT4- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: D Package: Tube Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 69W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHD3 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277780-SIHD3N50DT4-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: D
Package: Tube
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 69W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHD3
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHD3N50DT4-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHD3N50DT4-GE3-ND
Single FETs, MOSFETs SIHD3N50DT4-GE3-ND
N-Channel 500V 3A (Tc) 69W (Tc) Surface Mount TO-252AA

N-Channel 500V 3A (Tc) 69W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHD3N50DT4-GE3 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHD3N50DT4-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHD3N50DT4-GE3
MOSFET N-CH 500V 3A DPAK

MOSFET N-CH 500V 3A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V Vds 30V Vgs DPAK (TO-252)

MOSFET 500V Vds 30V Vgs DPAK (TO-252)

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Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277780-SIHD3N50DT4-GE3 SIHD3N50DT4-GE3-ND SIHD3N50DT4-GE3 SIHD3N50DT4-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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