Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHD240N60E-T1-GE3

The SiHD240N60E is an N-channel MOSFET for switch mode and power factor correction power supplies, housed in a DPAK (TO-252) package. It has a drain-source voltage rating of 600 V, a maximum continuous drain current of 7 A at a junction temperature of 100 °C, and a typical on-state resistance of 0.208 Ω at 25 °C and 10 V gate-source voltage. The device features avalanche energy rating of 81 mJ and operates within a junction and storage temperature range of -55 °C to +150 °C. Thermal resistance from junction to case is 1.6 °C/W and from junction to ambient is 62 °C/W. The gate-source threshold voltage ranges from 3.0 V to 5.0 V, and total gate charge is up to 23 nC.