Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHD180N60ET4-GE3

The SiHD180N60E is an N-channel MOSFET in a DPAK (TO-252) package designed for high-efficiency switching applications such as server power supplies, SMPS, PFC, and motor drives. It has a drain-source voltage rating of 600 V, a typical on-state resistance of 0.170 Ω at 25 °C and 10 V gate-source voltage, and a continuous drain current of 12 A at 100 °C case temperature. The device is rated for 88 mJ single-pulse avalanche energy and features a maximum power dissipation of 156 W. Operating junction and storage temperatures range from -55 °C to +150 °C. The package dimensions conform to TO-252AA standards with a body size of 6.35 mm x 6.73 mm and height up to 10.41 mm. The part is lead-free and halogen-free, and meets RoHS compliance. Thermal resistance from junction to case is 0.8 °C/W. The device is qualified under AEC-Q200 standards.