Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB33N60EFT1-GE3

The SiHB33N60E is an N-channel MOSFET designed for high-voltage switching applications such as server and telecom power supplies, SMPS, PFC, and renewable energy systems. It is housed in a D2PAK (TO-263) package with dimensions compliant with JEDEC TO-263AB standards. The device features a maximum drain-source voltage of 600 V, a continuous drain current of 33 A at 25 °C, and a maximum on-state resistance of 0.099 Ω at V GS = 10 V. It has a gate charge of 150 nC and is rated for single-pulse avalanche energy of 793 mJ. The operating junction and storage temperature range is -55 °C to +150 °C. The part meets RoHS and is lead-free. The ordering suffix FT1-GE3 indicates a specific terminal finish or packaging variant, but all electrical and thermal characteristics are shared across the SiHB33N60E series.