Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB30N60ET5-GE3

N-Channel MOSFET in a D2PAK (TO-263) surface mount package rated for 600 V drain-source voltage, 29 A continuous drain current at 25 °C, and 250 W power dissipation. Features a maximum on-state resistance of 0.125 Ω at 10 V gate-source voltage, total gate charge of 130 nC, and single pulse avalanche energy of 690 mJ. Meets RoHS and is lead-free and halogen-free.