Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHB120N60E-GE3

Description
Win Source Part Number: 1277743-SIHB120N60E- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 179W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHB120 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277743-SIHB120N60E-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHB120N60E-GE3-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 25A, 600V, To-263; Transistor Polarity Vishay - 40AH1233 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHB120N60E-GE3 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1277743-SIHB120N60E- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 179W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHB120 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277743-SIHB120N60E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277743-SIHB120N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277743-SIHB120N60E-GE3
Win Source Part Number: 1277743-SIHB120N60E- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 179W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHB120 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277743-SIHB120N60E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: E
Package: Tube
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHB120
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
MOSFET Transistor
278-SIHB120N60E-GE3
MOSFET Transistor 278-SIHB120N60E-GE3
Power Field-Effect Transistor, Product overview: SIHB120N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB120N60E-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: SIHB120N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB120N60E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIHB120N60E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHB120N60E-GE3-ND
Single FETs, MOSFETs SIHB120N60E-GE3-ND
N-Channel 600V 25A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 25A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Mosfet, N-Ch, 25A, 600V, To-263; Transistor Polarity Vishay - 40AH1233 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 25A, 600V, To-263; Transistor Polarity Vishay
40AH1233
Mosfet, N-Ch, 25A, 600V, To-263; Transistor Polarity Vishay 40AH1233
MOSFET, N-CH, 25A, 600V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 25A, 600V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHB120N60E-GE3
MOSFET SIHB120N60E-GE3
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)

MOSFET 600V Vds 30V Vgs D2PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHB120N60E-GE3 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHB120N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHB120N60E-GE3
MOSFET N-CH 600V 25A D2PAK

MOSFET N-CH 600V 25A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277743-SIHB120N60E-GE3 278-SIHB120N60E-GE3 SIHB120N60E-GE3-ND 40AH1233 SIHB120N60E-GE3 SIHB120N60E-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 25A, 600V, To-263; Transistor Polarity Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TJ -55 C (-67 F)
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