Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE810DF-T1-E3 SIE810DF-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1096402-SIE810DF-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (L) Dimension: 10-PolarPAK (L) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 13000pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 1.4 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1096402-SIE810DF-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (L) Dimension: 10-PolarPAK (L) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 13000pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 1.4 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE810DF-T1-E3 - 1096402-SIE810DF-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE810DF-T1-E3
1096402-SIE810DF-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE810DF-T1-E3 1096402-SIE810DF-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096402-SIE810DF-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (L) Dimension: 10-PolarPAK (L) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 13000pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 1.4 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096402-SIE810DF-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (L)
Dimension: 10-PolarPAK (L)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 300nC @ 10V
Max Input Capacitance: 13000pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 1.4 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIE810DF-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIE810DF-T1-E3TR-ND
Single FETs, MOSFETs SIE810DF-T1-E3TR-ND
N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIE810DF-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIE810DF-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIE810DF-T1-E3
MOSFET N-CH 20V 60A 10POLARPAK

MOSFET N-CH 20V 60A 10POLARPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20V 60A 125W 1.4mohm @ 10V

MOSFET 20V 60A 125W 1.4mohm @ 10V

Buy Now Datasheet
N Channel Mosfet, 20V, 60A Polarpak, Full Reel; Channel Type Vishay - 22M8804 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 20V, 60A Polarpak, Full Reel; Channel Type Vishay
22M8804
N Channel Mosfet, 20V, 60A Polarpak, Full Reel; Channel Type Vishay 22M8804
N CHANNEL MOSFET, 20V, 60A POLARPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Power Dissipation:125W RoHS Compliant: Yes

N CHANNEL MOSFET, 20V, 60A POLARPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Power Dissipation:125W RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 20V, 60A, Polarpak-10; Channel Type Vishay - 69W7162 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 20V, 60A, Polarpak-10; Channel Type Vishay
69W7162
Mosfet, N Channel, 20V, 60A, Polarpak-10; Channel Type Vishay 69W7162
MOSFET, N CHANNEL, 20V, 60A, POLARPAK-10; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.3V RoHS Compliant: Yes

MOSFET, N CHANNEL, 20V, 60A, POLARPAK-10; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.3V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096402-SIE810DF-T1-E3 SIE810DF-T1-E3TR-ND SIE810DF-T1-E3 SIE810DF-T1-E3 22M8804 69W7162
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE810DF-T1-E3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 20V, 60A Polarpak, Full Reel; Channel Type Vishay Mosfet, N Channel, 20V, 60A, Polarpak-10; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 20 volts
PD 5200 to 125000 milliwatts 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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4 suppliers