Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE810DF-T1-E3 SIE810DF-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1096402-SIE810DF-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (L) Dimension: 10-PolarPAK (L) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 13000pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 1.4 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE810DF-T1-E3 - 1096402-SIE810DF-T1-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIE810DF-T1-E3TR-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 20V, 60A Polarpak, Full Reel; Channel Type Vishay - 22M8804 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Channel, 20V, 60A, Polarpak-10; Channel Type Vishay - 69W7162 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIE810DF-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1096402-SIE810DF-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (L) Dimension: 10-PolarPAK (L) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 13000pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 1.4 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE810DF-T1-E3 - 1096402-SIE810DF-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE810DF-T1-E3
1096402-SIE810DF-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE810DF-T1-E3 1096402-SIE810DF-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096402-SIE810DF-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (L) Dimension: 10-PolarPAK (L) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 13000pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 1.4 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096402-SIE810DF-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (L)
Dimension: 10-PolarPAK (L)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 300nC @ 10V
Max Input Capacitance: 13000pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 1.4 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIE810DF-T1-E3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIE810DF-T1-E3TR-ND
Single FETs, MOSFETs SIE810DF-T1-E3TR-ND
N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIE810DF-T1-E3
MOSFET SIE810DF-T1-E3
MOSFET 20V 60A 125W 1.4mohm @ 10V

MOSFET 20V 60A 125W 1.4mohm @ 10V

Buy Now Datasheet
N Channel Mosfet, 20V, 60A Polarpak, Full Reel; Channel Type Vishay - 22M8804 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 20V, 60A Polarpak, Full Reel; Channel Type Vishay
22M8804
N Channel Mosfet, 20V, 60A Polarpak, Full Reel; Channel Type Vishay 22M8804
N CHANNEL MOSFET, 20V, 60A POLARPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Power Dissipation:125W RoHS Compliant: Yes

N CHANNEL MOSFET, 20V, 60A POLARPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Power Dissipation:125W RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 20V, 60A, Polarpak-10; Channel Type Vishay - 69W7162 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 20V, 60A, Polarpak-10; Channel Type Vishay
69W7162
Mosfet, N Channel, 20V, 60A, Polarpak-10; Channel Type Vishay 69W7162
MOSFET, N CHANNEL, 20V, 60A, POLARPAK-10; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.3V RoHS Compliant: Yes

MOSFET, N CHANNEL, 20V, 60A, POLARPAK-10; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.3V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIE810DF-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIE810DF-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIE810DF-T1-E3
MOSFET N-CH 20V 60A 10POLARPAK

MOSFET N-CH 20V 60A 10POLARPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1096402-SIE810DF-T1-E3 SIE810DF-T1-E3TR-ND SIE810DF-T1-E3 22M8804 69W7162 SIE810DF-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE810DF-T1-E3 Single FETs, MOSFETs MOSFET N Channel Mosfet, 20V, 60A Polarpak, Full Reel; Channel Type Vishay Mosfet, N Channel, 20V, 60A, Polarpak-10; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 20 volts
PD 5200 to 125000 milliwatts 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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