P-Channel 20V 7.7A (Ta) 660mW (Ta) Surface Mount Power Micro Foot® (2.4x2)
P-Channel 20V 7.7A (Ta) 660mW (Ta) Surface Mount Power Micro Foot® (2.4x2)
P-Channel 20V 7.7A (Ta) 660mW (Ta) Surface Mount Power Micro Foot® (2.4x2)
MOSFET P-CH 20V PWR MICRO FOOT
Manufacturer: Vishay
Category: Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series: TrenchFET®
Package: Tape & Reel (TR) /Cut Tape (CT)
Package / Case: 30-XFBGA
Supplier Device Package: Power Micro Foot® (2.4x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Base Product Number: SI8851
FET Type: P-Channel
VISHAY SI8851EDB-T2-E1 MOSFET, P CHANNEL, -20V, -16.7A, MICRO FOOT Product overview: SI8851EDB-T2-E1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -20V, -16.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, -16.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI8851EDB-T2-E1 can be used for catalog matching and distributor lookup.
MOSFET, P CHANNEL, -20V, -16.7A, MICRO FOOT; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET, P CHANNEL, -20V, -16.7A, MICRO FOOT; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:16.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET -20V Vds 8V Vgs MICROFOOT
MOSFET P-CH 20V PWR MICRO FOOT
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI8851EDB-T2-E1DKR-ND | SI8851EDB-T2-E1 | 278-SI8851EDB-T2-E1 | 29X6573 | SI8851EDB-T2-E1 | SI8851EDB-T2-E1 | |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs | P-Channel -20V -16.7A MOSFET Transistor | Mosfet, P Channel, -20V, -16.7A, Micro Foot; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Package Type | 30-XFBGA | 30-XFBGA | SOT3 | TO-3 | 30-XFBGA | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts |
