Qorvo 650 V, 6.7 mohm SiC FET UF3SC065007K4S

Description
Qorvo's UF3SC065007K4S 650 V, 6.7 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.
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Company
Product
Description
Supplier Links
650 V, 6.7 mohm SiC FET - UF3SC065007K4S - Qorvo
Greensboro, NC, United States
650 V, 6.7 mohm SiC FET
UF3SC065007K4S
650 V, 6.7 mohm SiC FET UF3SC065007K4S
Qorvo's UF3SC065007K4S 650 V, 6.7 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

Qorvo's UF3SC065007K4S 650 V, 6.7 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

Supplier's Site Datasheet
Single FETs, MOSFETs - 2312-UF3SC065007K4S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UF3SC065007K4S-ND
Single FETs, MOSFETs 2312-UF3SC065007K4S-ND
N-Channel 650V 120A (Tc) 789W (Tc) Through Hole TO-247-4

N-Channel 650V 120A (Tc) 789W (Tc) Through Hole TO-247-4

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Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs -  - Win Source Electronics
Yishun, Singapore
Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Manufacturer: Qorvo Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 650 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4

Manufacturer: Qorvo
Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss): 650 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4

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Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UF3SC065007K4S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UF3SC065007K4S
MOSFET N-CH 650V 120A TO247-4

MOSFET N-CH 650V 120A TO247-4

Supplier's Site
Sic Schottky Diode, 650V, 120A, To-247 Rohs Compliant Unitedsic - 47AK1764 - Newark, An Avnet Company
Chicago, IL, United States
Sic Schottky Diode, 650V, 120A, To-247 Rohs Compliant Unitedsic
47AK1764
Sic Schottky Diode, 650V, 120A, To-247 Rohs Compliant Unitedsic 47AK1764
SIC SCHOTTKY DIODE, 650V, 120A, TO-247 ROHS COMPLIANT: YES

SIC SCHOTTKY DIODE, 650V, 120A, TO-247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Qorvo DigiKey Win Source Electronics Acme Chip Technology Co., Limited Newark, An Avnet Company
Product Category RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors
Product Number UF3SC065007K4S 2312-UF3SC065007K4S-ND UF3SC065007K4S 47AK1764
Product Name 650 V, 6.7 mohm SiC FET Single FETs, MOSFETs Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Sic Schottky Diode, 650V, 120A, To-247 Rohs Compliant Unitedsic
Transistor Technology / Material 650 V, 6.7 mohm SiC FET
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