Qorvo's UF3SC065007K4S 650 V, 6.7 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.
N-Channel 650V 120A (Tc) 789W (Tc) Through Hole TO-247-4
Manufacturer: Qorvo
Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss): 650 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4
MOSFET N-CH 650V 120A TO247-4
SIC SCHOTTKY DIODE, 650V, 120A, TO-247 ROHS COMPLIANT: YES
Qorvo | DigiKey | Win Source Electronics | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
---|---|---|---|---|---|
Product Category | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors |
Product Number | UF3SC065007K4S | 2312-UF3SC065007K4S-ND | UF3SC065007K4S | 47AK1764 | |
Product Name | 650 V, 6.7 mohm SiC FET | Single FETs, MOSFETs | Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Sic Schottky Diode, 650V, 120A, To-247 Rohs Compliant Unitedsic |
Transistor Technology / Material | 650 V, 6.7 mohm SiC FET |