Manufacturer: Vishay Siliconix
Win Source Part Number: 801113-SI8817DB-T2-E
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 4-XFBGA
Power Dissipation (Maximum): 500mW
Popularity: High
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 76mOhm at 1A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 19nC at 8V
Input Capacitance (Ciss) (Maximum) at Vds: 615pF at 10V
Vgs(th) (Maximum) at Id: 1V at 250μA
Maximum Vgs: ±8V
P-Channel 20V 2.1A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
P-Channel 20V 2.1A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
P-Channel 20V 2.1A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
MOSFET, P-CH, 20V, 2.9A, MICRO FOOT ROHS COMPLIANT: YES
MOSFET -20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
MOSFET P-CH 20V 4MICROFOOT
| Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 801113-SI8817DB-T2-E1 | SI8817DB-T2-E1CT-ND | 57AJ0479 | SI8817DB-T2-E1 | SI8817DB-T2-E1 |
| Product Name | FETs - Single - SI8817DB-T2-E1 | Single FETs, MOSFETs | Mosfet, P-Ch, 20V, 2.9A, Micro Foot Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel |
