2-Ch N-Ch MOSFET, 20V, 6A, 26mR, PowerPAK-8, SM Product overview: SI7900AEDN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7900AEDN-T1-E
Manufacturer: Vishay
Win Source Part Number: 028689-SI7900AEDN-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 16nC @ 4.5V
Maximum Rds On at Id,Vgs: 26 mOhm @ 8.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6A 1.5W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6A 1.5W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6A 1.5W Surface Mount PowerPAK® 1212-8 Dual
MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
MOSFET, DUAL N CHANNEL, 20V, 6A, POWERPAK-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.02ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 20V POWERPAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8.5A; On Resistance Rds(on):0.036ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET 2N-CH 20V 6A PPAK 1212
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2088-SI7900AEDN-T1-E3 | 028689-SI7900AEDN-T1-E3 | SI7900AEDN-T1-E3TR-ND | SI7900AEDN-T1-E3 | 09X6454 | 06J8175 | SI7900AEDN-T1-E3 |
| Product Name | 20V 6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7900AEDN-T1-E3 | FET, MOSFET Arrays | MOSFET | Mosfet, Dual N Channel, 20V, 6A, Powerpak-8; Transistor Polarity Vishay | Dual N Channel Mosfet, 20V Powerpak, Full Reel; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 1500 milliwatts | 1500 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 20 volts |
