The Si7898DP is an N-channel MOSFET designed for fast switching in DC/DC power supplies and industrial motor drives. It is housed in a PowerPAK SO-8 package measuring 6.15 mm by 5.15 mm with a 1.07 mm profile. The device has a drain-source voltage rating of 150 V, a continuous drain current of 4.8 A at 25 °C and 3.8 A at 70 °C, and a maximum power dissipation of 5.0 W at 25 °C and 3.2 W at 70 °C. Its drain-source on-state resistance is 0.085 Ω at 10 V gate-source voltage and 0.095 Ω at 6.0 V. Total gate charge is 17 to 21 nC, and junction temperature ranges from -55 °C to 150 °C. The part is halogen-free per IEC 61249-2-21 and lead-free. The Si7898DP-T1-E3 variant matches the base part specifications.
Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1.9W; No. of Pins:8Pins RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 26AC3350 |
| Product Name | Channel Type Vishay |
| Package Type | TO-3 |
