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Fuji Electric Corp. of America TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2879-01 2SK2879-01

  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2879-01 - 1037738-2SK2879-01 - Win Source Electronics
    Win Source Electronics
  • MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.33Ohm;ID +/-20A;TO-3P;PD 150W;VGS +/-30V - 70212463 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Description
Manufacturer: Fuji Electric Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037738-2SK2879-01 Length: 15.494 mm Drain to Source Voltage (Vdss): 500 V Forward Voltage: 1.1 V Power Dissipation: 150 W Height: 19.5072 mm Resistance: 330 mΩ Number of Pins: 3 Width: 4.4958 mm Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): STW14NK50Z; STP14NK50Z; IRFP450APBF; IRF840APBF; IRFB11N50APBF; STP11NK50Z; Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 20 ns Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 160 ns Drain to Source Resistance: 380 mΩ Gate to Source Voltage (Vgs): 30 V
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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2879-01 - 1037738-2SK2879-01 - Win Source Electronics
Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2879-01
1037738-2SK2879-01
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2879-01 1037738-2SK2879-01
Manufacturer: Fuji Electric Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037738-2SK2879-01 Length: 15.494 mm Drain to Source Voltage (Vdss): 500 V Forward Voltage: 1.1 V Power Dissipation: 150 W Height: 19.5072 mm Resistance: 330 mΩ Number of Pins: 3 Width: 4.4958 mm Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): STW14NK50Z; STP14NK50Z; IRFP450APBF; IRF840APBF; IRFB11N50APBF; STP11NK50Z; Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 20 ns Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 160 ns Drain to Source Resistance: 380 mΩ Gate to Source Voltage (Vgs): 30 V

Manufacturer: Fuji Electric
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1037738-2SK2879-01
Length: 15.494 mm
Drain to Source Voltage (Vdss): 500 V
Forward Voltage: 1.1 V
Power Dissipation: 150 W
Height: 19.5072 mm
Resistance: 330 mΩ
Number of Pins: 3
Width: 4.4958 mm
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): STW14NK50Z; STP14NK50Z; IRFP450APBF; IRF840APBF; IRFB11N50APBF; STP11NK50Z;
Popularity: Low
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Turn-On Delay Time: 20 ns
Drain to Source Breakdown Voltage: 500 V
Turn-Off Delay Time: 160 ns
Drain to Source Resistance: 380 mΩ
Gate to Source Voltage (Vgs): 30 V

Supplier's Site
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.33Ohm;ID +/-20A;TO-3P;PD 150W;VGS +/-30V - 70212463 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.33Ohm;ID +/-20A;TO-3P;PD 150W;VGS +/-30V
70212463
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.33Ohm;ID +/-20A;TO-3P;PD 150W;VGS +/-30V 70212463
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low On-Resistance`

Features:

  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
Supplier's Site

Technical Specifications

  Win Source Electronics Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037738-2SK2879-01 70212463
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2879-01 MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.33Ohm;ID +/-20A;TO-3P;PD 150W;VGS +/-30V
V(BR)DSS 500 volts 500 volts
rDS(on) 0.3800 ohms 0.3300 ohms
PD 150000 milliwatts 150000 milliwatts
TJ -55 C (-67 F)
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