TRANSISTOR 33 A, 12 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power Product overview: SI7858BDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 33 A, 12 V, 0.0025 ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 33 A, 12 V, 0.0025 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7858BDP-T1-GE3
N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 126241-SI7858BDP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 84nC @ 4.5V
Max Input Capacitance: 5760pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 15A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
MOSFET N-CH 12V 40A PPAK SO-8
MOSFET, N-CH, 12V, 40A, POWERPAK SO ROHS COMPLIANT: YES
MOSFET N-CH 12V 40A PPAK SO-8
MOSFET 12V Vds 8V Vgs PowerPAK SO-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7858BDP-T1-GE3 | SI7858BDP-T1-GE3TR-ND | 126241-SI7858BDP-T1-GE3 | SI7858BDP-T1-GE3 | 57AJ0468 | SI7858BDP-T1-GE3 | SI7858BDP-T1-GE3 |
| Product Name | N-Channel 33 A 12 V 0.0025 ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7858BDP-T1-GE3 | Single FETs, MOSFETs | Mosfet, N-Ch, 12V, 40A, Powerpak So Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| PD | 48000 milliwatts | 5000 to 48000 milliwatts | 5000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAKR SO-8 |
