Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7858BDP-T1-GE3

Description
N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

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Single FETs, MOSFETs - SI7858BDP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7858BDP-T1-GE3TR-ND
Single FETs, MOSFETs SI7858BDP-T1-GE3TR-ND
N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

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Single FETs, MOSFETs - SI7858BDP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7858BDP-T1-GE3DKR-ND
Single FETs, MOSFETs SI7858BDP-T1-GE3DKR-ND
N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

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Single FETs, MOSFETs - SI7858BDP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7858BDP-T1-GE3CT-ND
Single FETs, MOSFETs SI7858BDP-T1-GE3CT-ND
N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7858BDP-T1-GE3 - 126241-SI7858BDP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7858BDP-T1-GE3
126241-SI7858BDP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7858BDP-T1-GE3 126241-SI7858BDP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 126241-SI7858BDP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Ta), 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 84nC @ 4.5V Max Input Capacitance: 5760pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 15A, 4.5V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 126241-SI7858BDP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 84nC @ 4.5V
Max Input Capacitance: 5760pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 15A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
N-Channel 33 A 12 V 0.0025 ohm MOSFET Transistor
278-SI7858BDP-T1-GE3
N-Channel 33 A 12 V 0.0025 ohm MOSFET Transistor 278-SI7858BDP-T1-GE3
TRANSISTOR 33 A, 12 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power Product overview: SI7858BDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 33 A, 12 V, 0.0025 ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 33 A, 12 V, 0.0025 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7858BDP-T1-GE3 can be used for catalog matching and distributor lookup.

TRANSISTOR 33 A, 12 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power Product overview: SI7858BDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 33 A, 12 V, 0.0025 ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 33 A, 12 V, 0.0025 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7858BDP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET 12V Vds 8V Vgs PowerPAK SO-8

MOSFET 12V Vds 8V Vgs PowerPAK SO-8

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Single FETs, MOSFETs - SI7858BDP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7858BDP-T1-GE3
Single FETs, MOSFETs SI7858BDP-T1-GE3
MOSFET N-CH 12V 40A PPAK SO-8

MOSFET N-CH 12V 40A PPAK SO-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7858BDP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7858BDP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7858BDP-T1-GE3
MOSFET N-CH 12V 40A PPAK SO-8

MOSFET N-CH 12V 40A PPAK SO-8

Supplier's Site
Mosfet, N-Ch, 12V, 40A, Powerpak So Rohs Compliant Vishay - 57AJ0468 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 12V, 40A, Powerpak So Rohs Compliant Vishay
57AJ0468
Mosfet, N-Ch, 12V, 40A, Powerpak So Rohs Compliant Vishay 57AJ0468
MOSFET, N-CH, 12V, 40A, POWERPAK SO ROHS COMPLIANT: YES

MOSFET, N-CH, 12V, 40A, POWERPAK SO ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7858BDP-T1-GE3TR-ND 126241-SI7858BDP-T1-GE3 278-SI7858BDP-T1-GE3 SI7858BDP-T1-GE3 SI7858BDP-T1-GE3 SI7858BDP-T1-GE3 57AJ0468
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7858BDP-T1-GE3 N-Channel 33 A 12 V 0.0025 ohm MOSFET Transistor MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 12V, 40A, Powerpak So Rohs Compliant Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAK® SO-8 SO-8; PowerPAKR SO-8 TO-3
V(BR)DSS 12 volts 12 volts
PD 5000 to 48000 milliwatts 48000 milliwatts 5000 milliwatts
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