Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7852DP-T1-E3 SI7852DP-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028674-SI7852DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.9W (Ta) Family Name: Si7852DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 7.6A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA (Min) Max Gate Charge: 41nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16.5 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): DMTH8012LPS-13; DMTH8012LPSQ-13; FDMS3572-F095; FDMS86381-F085; Introduction Date: May 23, 2001 ECCN: EAR99 Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Quantity per package: 3k pcs
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Description
Manufacturer: Vishay Win Source Part Number: 028674-SI7852DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.9W (Ta) Family Name: Si7852DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 7.6A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA (Min) Max Gate Charge: 41nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16.5 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): DMTH8012LPS-13; DMTH8012LPSQ-13; FDMS3572-F095; FDMS86381-F085; Introduction Date: May 23, 2001 ECCN: EAR99 Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7852DP-T1-E3 - 028674-SI7852DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7852DP-T1-E3
028674-SI7852DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7852DP-T1-E3 028674-SI7852DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 028674-SI7852DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.9W (Ta) Family Name: Si7852DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 7.6A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA (Min) Max Gate Charge: 41nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16.5 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): DMTH8012LPS-13; DMTH8012LPSQ-13; FDMS3572-F095; FDMS86381-F085; Introduction Date: May 23, 2001 ECCN: EAR99 Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Quantity per package: 3k pcs

Manufacturer: Vishay
Win Source Part Number: 028674-SI7852DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Family Name: Si7852DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 7.6A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 41nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16.5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): DMTH8012LPS-13; DMTH8012LPSQ-13; FDMS3572-F095; FDMS86381-F085;
Introduction Date: May 23, 2001
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs

Buy Now Datasheet
Singapore
N-Channel 80V 7.6A SOIC MOSFET Transistor
278-SI7852DP-T1-E3
N-Channel 80V 7.6A SOIC MOSFET Transistor 278-SI7852DP-T1-E3
N-Channel MOSFET, 80V, 7.6A, 16.5mR, SOIC, PowerPAK Product overview: SI7852DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V, 7.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 7.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7852DP-T1-E3 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 80V, 7.6A, 16.5mR, SOIC, PowerPAK Product overview: SI7852DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V, 7.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 7.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7852DP-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7852DP-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7852DP-T1-E3CT-ND
Single FETs, MOSFETs SI7852DP-T1-E3CT-ND
N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7852DP-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7852DP-T1-E3TR-ND
Single FETs, MOSFETs SI7852DP-T1-E3TR-ND
N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7852DP-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7852DP-T1-E3DKR-ND
Single FETs, MOSFETs SI7852DP-T1-E3DKR-ND
N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7852DP-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7852DP-T1-E3
Single FETs, MOSFETs SI7852DP-T1-E3
MOSFET N-CH 80V 7.6A PPAK SO-8

MOSFET N-CH 80V 7.6A PPAK SO-8

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 80V Vds 20V Vgs PowerPAK SO-8

MOSFET 80V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Mosfet,n Ch,80V,7.6A,ppso8; Transistor Polarity Vishay - 61M9831 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Ch,80V,7.6A,ppso8; Transistor Polarity Vishay
61M9831
Mosfet,n Ch,80V,7.6A,ppso8; Transistor Polarity Vishay 61M9831
MOSFET,N CH,80V,7.6A,PPSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

MOSFET,N CH,80V,7.6A,PPSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 80V, 7.6A, Powerpak So-8, Full Reel; Channel Type Vishay - 29X0550 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 80V, 7.6A, Powerpak So-8, Full Reel; Channel Type Vishay
29X0550
Mosfet, N Channel, 80V, 7.6A, Powerpak So-8, Full Reel; Channel Type Vishay 29X0550
MOSFET, N CHANNEL, 80V, 7.6A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:7.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.9W RoHS Compliant: Yes

MOSFET, N CHANNEL, 80V, 7.6A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:7.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.9W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7852DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7852DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7852DP-T1-E3
MOSFET N-CH 80V 7.6A PPAK SO-8

MOSFET N-CH 80V 7.6A PPAK SO-8

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028674-SI7852DP-T1-E3 278-SI7852DP-T1-E3 SI7852DP-T1-E3CT-ND SI7852DP-T1-E3 SI7852DP-T1-E3 61M9831 29X0550 SI7852DP-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7852DP-T1-E3 N-Channel 80V 7.6A SOIC MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet,n Ch,80V,7.6A,ppso8; Transistor Polarity Vishay Mosfet, N Channel, 80V, 7.6A, Powerpak So-8, Full Reel; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 80 volts 80 volts
PD 1900 milliwatts 1900 milliwatts 1900 milliwatts 1900 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAK® SO-8 SO-8; PowerPAK® SO-8 TO-3 TO-3; SO-8 SO-8; PowerPAKR SO-8
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