Vishay Precision Group Single FETs, MOSFETs SI7846DP-T1-E3

N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

150V 4A N-CH MOSFET SOIC 50mR RdsOn Product overview: SI7846DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 4A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 4A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7846DP-T1-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 028670-SI7846DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Family Name: Si7846DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 36nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): TSM650N15CR RLG; FDMS86252; FDMS2572-F095; FDMS2572;
Introduction Date: April 09, 2001
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient