Manufacturer: Vishay
Win Source Part Number: 1096165-SI7434DP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 2.3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 50nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 155 mOhm @ 3.8A, 10V
Alternative Parts (Cross-Reference): AON6458; Si7434DP; SI7434DP-T1-GE3; Si7434DP-T1-E3;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
MOSFET N-CH 250V 2.3A PPAK SO-8
MOSFET 250V Vds 20V Vgs PowerPAK SO-8
MOSFET, N CHANNEL, 250V, 2.3A, POWERPAK SO-8; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
N CHANNEL MOSFET, 250V, 3.8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096165-SI7434DP-T1-E3 | 742-SI7434DP-T1-E3CT-ND | SI7434DP-T1-E3 | SI7434DP-T1-E3 | 18X0023 | 57J5731 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7434DP-T1-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 250V, 2.3A, Powerpak So-8; Channel Type Vishay | N Channel Mosfet, 250V, 3.8A, Soic; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 250 volts | |||||
| PD | 1900 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) |
