N-CH MOSFET 250V 2.3A 155mR SOIC Surface Mount Product overview: SI7434DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 250V, 2.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 250V, 2.3A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7434DP-T1-E3 can be used for catalog matching and distributor lookup.
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 1096165-SI7434DP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 2.3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 50nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 155 mOhm @ 3.8A, 10V
Alternative Parts (Cross-Reference): AON6458; Si7434DP; SI7434DP-T1-GE3; Si7434DP-T1-E3;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET N-CH 250V 2.3A PPAK SO-8
MOSFET 250V Vds 20V Vgs PowerPAK SO-8
MOSFET, N CHANNEL, 250V, 2.3A, POWERPAK SO-8; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
N CHANNEL MOSFET, 250V, 3.8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-SI7434DP-T1-E3 | 742-SI7434DP-T1-E3CT-ND | 1096165-SI7434DP-T1-E3 | SI7434DP-T1-E3 | SI7434DP-T1-E3 | 18X0023 | 57J5731 |
| Product Name | SMD 250V 2.3A SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7434DP-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 250V, 2.3A, Powerpak So-8; Channel Type Vishay | N Channel Mosfet, 250V, 3.8A, Soic; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| PD | 1900 milliwatts | 1900 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | Surface Mount | TO-3; SO-8 | TO-3 |
