Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7156DP-T1-E3 SI7156DP-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 042620-SI7156DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 6900pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 042620-SI7156DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 6900pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7156DP-T1-E3 - 042620-SI7156DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7156DP-T1-E3
042620-SI7156DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7156DP-T1-E3 042620-SI7156DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 042620-SI7156DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 6900pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 042620-SI7156DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 6900pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7156DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7156DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7156DP-T1-E3
MOSFET N-CH 40V 50A PPAK SO-8

MOSFET N-CH 40V 50A PPAK SO-8

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 042620-SI7156DP-T1-E3 SI7156DP-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7156DP-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 5400 to 83000 milliwatts
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