Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7120ADN-T1-GE3 SI7120ADN-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 064549-SI7120ADN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 45nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 21 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 064549-SI7120ADN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 45nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 21 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7120ADN-T1-GE3 - 064549-SI7120ADN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7120ADN-T1-GE3
064549-SI7120ADN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7120ADN-T1-GE3 064549-SI7120ADN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 064549-SI7120ADN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 45nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 21 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 064549-SI7120ADN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 45nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 21 mOhm @ 9.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI7120ADN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7120ADN-T1-GE3
Single FETs, MOSFETs SI7120ADN-T1-GE3
MOSFET N-CH 60V 6A PPAK1212-8

MOSFET N-CH 60V 6A PPAK1212-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7120ADN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7120ADN-T1-GE3TR-ND
Single FETs, MOSFETs SI7120ADN-T1-GE3TR-ND
N-Channel 60V 6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 60V 6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7120ADN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7120ADN-T1-GE3CT-ND
Single FETs, MOSFETs SI7120ADN-T1-GE3CT-ND
N-Channel 60V 6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 60V 6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7120ADN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7120ADN-T1-GE3DKR-ND
Single FETs, MOSFETs SI7120ADN-T1-GE3DKR-ND
N-Channel 60V 6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 60V 6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8

MOSFET 60V Vds 20V Vgs PowerPAK 1212-8

Buy Now Datasheet
Mosfet,n Channel,diode,60V,9.5A,12128Ppak; Channel Type Vishay - 23T8523 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Channel,diode,60V,9.5A,12128Ppak; Channel Type Vishay
23T8523
Mosfet,n Channel,diode,60V,9.5A,12128Ppak; Channel Type Vishay 23T8523
MOSFET,N CHANNEL,DIODE,60V,9. 5A,12128PPAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

MOSFET,N CHANNEL,DIODE,60V,9.5A,12128PPAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7120ADN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7120ADN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7120ADN-T1-GE3
MOSFET N-CH 60V 6A PPAK1212-8

MOSFET N-CH 60V 6A PPAK1212-8

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 064549-SI7120ADN-T1-GE3 SI7120ADN-T1-GE3 SI7120ADN-T1-GE3TR-ND SI7120ADN-T1-GE3 23T8523 SI7120ADN-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7120ADN-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet,n Channel,diode,60V,9.5A,12128Ppak; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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