Manufacturer: Vishay
Win Source Part Number: 1096127-SI7100DN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 105nC @ 8V
Max Input Capacitance: 3810pF @ 4V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 15A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
MOSFET N-CH 8V 35A PPAK 1212-8 Product overview: SI7100DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7100DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 8V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET 8.0V 35A 52W 3.5mohm @ 4.5V
MOSFET N-CH 8V 35A PPAK 1212-8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1096127-SI7100DN-T1-GE3 | 278-SI7100DN-T1-GE3 | SI7100DN-T1-GE3-ND | 880-SI7100DN-T1-GE3 | SI7100DN-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7100DN-T1-GE3 | 8V 35A MOSFET Transistor | Single FETs, MOSFETs | MOSFET 8.0V 35A 52W 3.5mohm @ 4.5V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 8 volts | 8 volts | |||
| PD | 3800 to 52000 milliwatts | 3800 milliwatts | 3800 milliwatts | ||
| TJ | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | ||
| Package Type | SOT3; PowerPAK 1212-8 | Tape & Reel (TR) | PowerPAK® 1212-8 | 3810 pF @ 4 V |
