Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6882EDQ-T1-E3 SI6882EDQ-T1-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092925-SI6882EDQ-T1 -E3 Packaging: Tape & Reel Mounting: SMD (SMT) Number of Pins: 8 Rise Time: 800 µs Fall Time: 5.5 µs Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSSOP Popularity: Low Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 1.5 µs Continuous Drain Current (ID): 6 A Turn-Off Delay Time: 6 µs Gate to Source Voltage (Vgs): 12 V
Request a Quote
Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092925-SI6882EDQ-T1 -E3 Packaging: Tape & Reel Mounting: SMD (SMT) Number of Pins: 8 Rise Time: 800 µs Fall Time: 5.5 µs Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSSOP Popularity: Low Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 1.5 µs Continuous Drain Current (ID): 6 A Turn-Off Delay Time: 6 µs Gate to Source Voltage (Vgs): 12 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6882EDQ-T1-E3 - 1092925-SI6882EDQ-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6882EDQ-T1-E3
1092925-SI6882EDQ-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6882EDQ-T1-E3 1092925-SI6882EDQ-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092925-SI6882EDQ-T1 -E3 Packaging: Tape & Reel Mounting: SMD (SMT) Number of Pins: 8 Rise Time: 800 µs Fall Time: 5.5 µs Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSSOP Popularity: Low Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 1.5 µs Continuous Drain Current (ID): 6 A Turn-Off Delay Time: 6 µs Gate to Source Voltage (Vgs): 12 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092925-SI6882EDQ-T1-E3
Packaging: Tape & Reel
Mounting: SMD (SMT)
Number of Pins: 8
Rise Time: 800 µs
Fall Time: 5.5 µs
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TSSOP
Popularity: Low
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Turn-On Delay Time: 1.5 µs
Continuous Drain Current (ID): 6 A
Turn-Off Delay Time: 6 µs
Gate to Source Voltage (Vgs): 12 V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1092925-SI6882EDQ-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6882EDQ-T1-E3
Package Type SOT3; TSSOP
Unlock Full Specs
to access all available technical data

Similar Products

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110908SAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
3 suppliers
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor - T2G6003028-FS - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-200
Transistor Grade / Operating Range Military
View Details
4 suppliers
Transistor - 26175858 - Radwell International
Allen-Bradley / Rockwell Automation
View Details
MOSFETs - 1689585 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT23; Sot-23
View Details