Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092922-SI6875DQ-T1-
Mounting: SMD (SMT)
Power Dissipation: 1.19 W
Rise Time: 27 ns
Fall Time: 27 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TSSOP
Popularity: Low
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Dual
Continuous Drain Current (ID): 6.4 A
Drain to Source Breakdown Voltage: 20 V
Turn-Off Delay Time: 170 ns
Drain to Source Resistance: 27 mΩ
Gate to Source Voltage (Vgs): 8 V
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1092922-SI6875DQ-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6875DQ-T1-E3 |
| V(BR)DSS | 20 volts |
