Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6875DQ-T1-E3 SI6875DQ-T1-E3

Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092922-SI6875DQ-T1- E3 Mounting: SMD (SMT) Power Dissipation: 1.19 W Rise Time: 27 ns Fall Time: 27 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSSOP Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Dual Continuous Drain Current (ID): 6.4 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 170 ns Drain to Source Resistance: 27 mΩ Gate to Source Voltage (Vgs): 8 V