30V, N-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150
N-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
N-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
N-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 Product overview: CSD17483F4T from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 260 mOhm, LGA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 260 mOhm, LGA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD17483F4T can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 1030602-CSD17483F4T
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-PICOSTAR
Dimension: 3-XFDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.5A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 1.3nC @ 4.5V
Max Input Capacitance: 190pF @ 15V
Maximum Gate-Source Voltage: 12V
Maximum Rds On at Id,Vgs: 240 mOhm @ 500mA, 8V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 1.5A 3PICOSTAR
MOSFET N-CH 30V 1.5A 3PICOSTAR
MOSFET, N-CHANNEL, 30V, 1.5A, LGA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:850mV; Power RoHS Compliant: Yes
MOSFET 30V,N-Ch FemtoFET MOSFET
| Texas Instruments | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD17483F4T | 296-37781-6-ND | 278-CSD17483F4T | 1030602-CSD17483F4T | CSD17483F4T | CSD17483F4T | 52AH3715 | CSD17483F4T |
| Product Name | CSD17483F4 30V, N-Channel FemtoFET?MOSFET | Single FETs, MOSFETs | N-Channel 260 mOhm LGA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17483F4T | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Channel, 30V, 1.5A, Lga-3; Transistor Polarity Texas Instruments | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| IDSS | 5000 milliamps | 1500 milliamps | 1500 milliamps | |||||
| VGS(off) | 12 volts | |||||||
| rDS(on) | 0.2600 ohms | 0.1850 ohms |
