Vishay Precision Group 20V 6.1A TSSOP MOSFET Transistor SI6562CDQ-T1-GE3

2-Ch N/P-Ch JFET, 20V, 6.1A, 22mR, TSSOP Product overview: SI6562CDQ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.1A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.1A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6562CDQ-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 20V 6.7A 8-TSSOP

Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP

Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP

Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP

Manufacturer: Vishay
Win Source Part Number: 1249365-SI6562CDQ-T1-GE3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-TSSOP (0.173", 4.40mm Width)
Mounting: SMD
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Power - Max: 1.6W, 1.7W
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: 8-TSSOP
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 1.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 850pF @ 10V
Rds On (Maximum) @ Id, Vgs: 22 mOhm @ 5.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management