MOSFET N/P-CH 20V 6.7A 8-TSSOP
2-Ch N/P-Ch JFET, 20V, 6.1A, 22mR, TSSOP Product overview: SI6562CDQ-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.1A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.1A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6562CDQ-T1-GE3
Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP
Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP
Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP
Manufacturer: Vishay
Win Source Part Number: 1249365-SI6562CDQ-T1
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-TSSOP (0.173", 4.40mm Width)
Mounting: SMD
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Power - Max: 1.6W, 1.7W
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: 8-TSSOP
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 1.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 850pF @ 10V
Rds On (Maximum) @ Id, Vgs: 22 mOhm @ 5.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
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MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI6562CDQ-T1-GE3 | 278-SI6562CDQ-T1-GE3 | SI6562CDQ-T1-GE3CT-ND | 1249365-SI6562CDQ-T1-GE3 | SI6562CDQ-T1-GE3 | 26T3807 | SI6562CDQ-T1-GE3 |
| Product Name | FET, MOSFET Arrays | 20V 6.1A TSSOP MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6562CDQ-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N & P Channel, 20V, 6.7A, Tssop-8; Transistor Polarity Vishay | MOSFET |
| Polarity | P-Channel; N and P-Channel | N-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | ||||||
| IDSS | 6700 milliamps | 6700 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
