The Si5915DC is a dual P-channel MOSFET in a 1206-8 ChipFET package, designed for load switching in portable devices. It has an 8 V drain-source voltage rating and continuous drain currents of -3.4 A at 25 °C and -2.5 A at 85 °C. The on-state resistance is 0.070 Ω at -4.5 V gate-source voltage and 0.108 Ω at -2.5 V. The device complies with RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. Maximum junction-to-ambient thermal resistance is 90 °C/W under steady-state conditions when mounted on a 1" x 1" FR4 board. The operating junction and storage temperature range is -55 °C to 150 °C.
MOSFET 2P-CH 8V 3.4A 1206-8 Product overview: SI5915DC-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 3.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI5915DC-E3 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-SI5915DC-E3 |
| Product Name | 8V 3.4A MOSFET Transistor |
| TJ | -55 to 150 C (-67 to 302 F) |
