20V 4.4A Dual N-CH MOSFET Array, 40mR Rds(on), SMD Product overview: SI5908DC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, SMD, 20V, 4.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, SMD, 20V, 4.4A, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5908DC-T1-E3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
Manufacturer: Vishay
Win Source Part Number: 028583-SI5908DC-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 4.4A 1206-8
MOSFET, DUAL N CHANNEL, 20V, 4.4A, CHIPFET-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.4A; On Resistance Rds(on):0.032ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:1.1WRoHS Compliant: Yes
Dual MOSFET, Dual N Channel, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 20V, 1206, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.9A; On Resistance Rds(on):0.032ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:1V RoHS Compliant: Yes
MOSFET 20V Vds 8V Vgs 1206-8 ChipFET
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI5908DC-T1-E3 | SI5908DC-T1-E3DKR-ND | 028583-SI5908DC-T1-E3 | SI5908DC-T1-E3 | 69W7211 | 97W2675 | 57J5697 | SI5908DC-T1-E3 |
| Product Name | Dual SMD 20V 4.4A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5908DC-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N Channel, 20V, 4.4A, Chipfet-8; Transistor Polarity Vishay | Dual Mosfet, Dual N Channel, 4.4 A, 20 V, 0.032 Ohm, 4.5 V, 1 V Rohs Compliant Vishay | Dual N Channel Mosfet, 20V, 1206, Full Reel; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 1100 milliwatts | 1100 milliwatts | 1100 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | 8-SMD, Flat Leads | SOT3; 1206-8 ChipFET | TO-3 | TO-3 | TO-3 |
