Manufacturer: Vishay
Win Source Part Number: 028583-SI5908DC-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
MOSFET 2N-CH 20V 4.4A 1206-8
MOSFET, DUAL N CHANNEL, 20V, 4.4A, CHIPFET-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.4A; On Resistance Rds(on):0.032ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:1.1WRoHS Compliant: Yes
Dual MOSFET, Dual N Channel, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 20V, 1206, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.9A; On Resistance Rds(on):0.032ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:1V RoHS Compliant: Yes
MOSFET 20V Vds 8V Vgs 1206-8 ChipFET
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028583-SI5908DC-T1-E3 | SI5908DC-T1-E3DKR-ND | SI5908DC-T1-E3 | 69W7211 | 97W2675 | 57J5697 | SI5908DC-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5908DC-T1-E3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N Channel, 20V, 4.4A, Chipfet-8; Transistor Polarity Vishay | Dual Mosfet, Dual N Channel, 4.4 A, 20 V, 0.032 Ohm, 4.5 V, 1 V Rohs Compliant Vishay | Dual N Channel Mosfet, 20V, 1206, Full Reel; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 20 volts | ||||||
| PD | 1100 milliwatts | 1100 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) |
