Vishay Precision Group FET, MOSFET Arrays SI5908DC-T1-E3

Description
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
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Description
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™
Request a Quote Datasheet

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Product
Description
Supplier Links
FET, MOSFET Arrays - SI5908DC-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5908DC-T1-E3DKR-ND
FET, MOSFET Arrays SI5908DC-T1-E3DKR-ND
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™

Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™

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FET, MOSFET Arrays - SI5908DC-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5908DC-T1-E3CT-ND
FET, MOSFET Arrays SI5908DC-T1-E3CT-ND
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™

Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™

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FET, MOSFET Arrays - SI5908DC-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI5908DC-T1-E3TR-ND
FET, MOSFET Arrays SI5908DC-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™

Mosfet Array 2 N-Channel (Dual) 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5908DC-T1-E3 - 028583-SI5908DC-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5908DC-T1-E3
028583-SI5908DC-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5908DC-T1-E3 028583-SI5908DC-T1-E3
Manufacturer: Vishay Win Source Part Number: 028583-SI5908DC-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.4A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 7.5nC @ 4.5V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028583-SI5908DC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Mosfet, Dual N Channel, 20V, 4.4A, Chipfet-8; Transistor Polarity Vishay - 69W7211 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N Channel, 20V, 4.4A, Chipfet-8; Transistor Polarity Vishay
69W7211
Mosfet, Dual N Channel, 20V, 4.4A, Chipfet-8; Transistor Polarity Vishay 69W7211
MOSFET, DUAL N CHANNEL, 20V, 4.4A, CHIPFET-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.4A; On Resistance Rds(on):0.032ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:1.1WRoHS Compliant: Yes

MOSFET, DUAL N CHANNEL, 20V, 4.4A, CHIPFET-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.4A; On Resistance Rds(on):0.032ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:1.1WRoHS Compliant: Yes

Supplier's Site
Dual Mosfet, Dual N Channel, 4.4 A, 20 V, 0.032 Ohm, 4.5 V, 1 V Rohs Compliant Vishay - 97W2675 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, Dual N Channel, 4.4 A, 20 V, 0.032 Ohm, 4.5 V, 1 V Rohs Compliant Vishay
97W2675
Dual Mosfet, Dual N Channel, 4.4 A, 20 V, 0.032 Ohm, 4.5 V, 1 V Rohs Compliant Vishay 97W2675
Dual MOSFET, Dual N Channel, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V RoHS Compliant: Yes

Dual MOSFET, Dual N Channel, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V RoHS Compliant: Yes

Supplier's Site Datasheet
Dual N Channel Mosfet, 20V, 1206, Full Reel; Transistor Polarity Vishay - 57J5697 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 20V, 1206, Full Reel; Transistor Polarity Vishay
57J5697
Dual N Channel Mosfet, 20V, 1206, Full Reel; Transistor Polarity Vishay 57J5697
DUAL N CHANNEL MOSFET, 20V, 1206, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.9A; On Resistance Rds(on):0.032ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:1V RoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 20V, 1206, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.9A; On Resistance Rds(on):0.032ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:1V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20V Vds 8V Vgs 1206-8 ChipFET

MOSFET 20V Vds 8V Vgs 1206-8 ChipFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI5908DC-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI5908DC-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI5908DC-T1-E3
MOSFET 2N-CH 20V 4.4A 1206-8

MOSFET 2N-CH 20V 4.4A 1206-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI5908DC-T1-E3DKR-ND 028583-SI5908DC-T1-E3 69W7211 97W2675 57J5697 SI5908DC-T1-E3 SI5908DC-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5908DC-T1-E3 Mosfet, Dual N Channel, 20V, 4.4A, Chipfet-8; Transistor Polarity Vishay Dual Mosfet, Dual N Channel, 4.4 A, 20 V, 0.032 Ohm, 4.5 V, 1 V Rohs Compliant Vishay Dual N Channel Mosfet, 20V, 1206, Full Reel; Transistor Polarity Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-SMD, Flat Leads SOT3; 1206-8 ChipFET TO-3 TO-3 TO-3
Polarity N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 20 volts
PD 1100 milliwatts 1100 milliwatts
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