Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5904DC-T1 SI5904DC-T1

Description
Manufacturer: Vishay Win Source Part Number: 093758-SI5904DC-T1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.1A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 6nC @ 4.5V Maximum Rds On at Id,Vgs: 75 mOhm @ 3.1A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 093758-SI5904DC-T1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.1A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 6nC @ 4.5V Maximum Rds On at Id,Vgs: 75 mOhm @ 3.1A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5904DC-T1 - 093758-SI5904DC-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5904DC-T1
093758-SI5904DC-T1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5904DC-T1 093758-SI5904DC-T1
Manufacturer: Vishay Win Source Part Number: 093758-SI5904DC-T1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.1A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 6nC @ 4.5V Maximum Rds On at Id,Vgs: 75 mOhm @ 3.1A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 093758-SI5904DC-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.1A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Maximum Rds On at Id,Vgs: 75 mOhm @ 3.1A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
20V 4.2A 2.1W MOSFET Transistor
285-SI5904DC-T1
20V 4.2A 2.1W MOSFET Transistor 285-SI5904DC-T1
MOSFET 20V 4.2A 2.1W Product overview: SI5904DC-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.2A, 2.1W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.2A, 2.1W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI5904DC-T1 can be used for catalog matching and distributor lookup.

MOSFET 20V 4.2A 2.1W Product overview: SI5904DC-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.2A, 2.1W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.2A, 2.1W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI5904DC-T1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 093758-SI5904DC-T1 285-SI5904DC-T1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5904DC-T1 20V 4.2A 2.1W MOSFET Transistor
Polarity N-Channel N-Channel
V(BR)DSS 20 volts
PD 1100 milliwatts 1100 milliwatts
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