Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4931DY-T1-GE3 SI4931DY-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 064522-SI4931DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 6.7A
Gate-Source Threshold Voltage: 1V @ 350μA
Max Gate Charge: 52nC @ 4.5V
Maximum Rds On at Id,Vgs: 18 mOhm @ 8.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

P-CH JFET 12V 6.7A 18mR SOIC N Surface Mount Product overview: SI4931DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 12V, 6.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 12V, 6.7A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4931DY-T1-GE3 can be used for catalog matching and distributor lookup.

Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SOIC