P-CH MOSFET, -40V, 8A, 27mR, SO-8 Product overview: SI4909DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -40V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -40V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4909DY-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1096033-SI4909DY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.2W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 2000pF @ 20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
MOSFET 2P-CH 40V 8A 8SO
Mosfet Array 2 P-Channel (Dual) 40V 8A 3.2W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 40V 8A 3.2W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 40V 8A 3.2W Surface Mount 8-SOIC
MOSFET 2P-CH 40V 8A 8SOIC
MOSFET, DUAL P-CH, -40V, -8A, 150DEG C; Transistor Polarity:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4909DY-T1-GE3 | 1096033-SI4909DY-T1-GE3 | SI4909DY-T1-GE3 | 8181302 | 8181302P | SI4909DY-T1-GE3CT-ND | SI4909DY-T1-GE3 | SI4909DY-T1-GE3 | 70AC6508 |
| Product Name | -40V 8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4909DY-T1-GE3 | FET, MOSFET Arrays | MOSFETs | MOSFETs | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual P-Ch, -40V, -8A, 150Deg C; Transistor Polarity Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | |||||
| PD | 3200 milliwatts | 3200 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | Soic | SOIC | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 |
