Dual N-Ch MOSFET SO-8 60V 58mohm @ 10V
Dual N-Ch MOSFET SO-8 60V 58mohm @ 10V
Dual N-Ch MOSFET SO-8 60V 58mohm @ 10V
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Manufacturer: Vishay Siliconix
Win Source Part Number: 794278-SI4900DY-T1-E
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 5.3A
Power - Max: 3.1W
Family Name: Si4900DY
Categories: Discrete Semiconductor Products
Manufacturer Package: 8-SO
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 665pF @ 15V
Rds On (Maximum) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
Alternative Parts (Cross-Reference): FW297-TL-2W; KMB4D5DN60QA; AO4828; HAT2038R-EL;
Introduction Date: January 16, 2006
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 60V 5.3A 8SOIC
DUAL N CHANNEL MOSFET, 60V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; On Resistance Rds(on):0.072ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 60V, 5.3A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; On Resistance Rds(on):0.046ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| RS Components, Ltd. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1808002 | SI4900DY-T1-E3CT-ND | 794278-SI4900DY-T1-E3 | SI4900DY-T1-E3 | SI4900DY-T1-E3 | 51K6968 | 09X6438 |
| Product Name | MOSFETs | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4900DY-T1-E3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N Channel Mosfet, 60V, Soic, Full Reel; Transistor Polarity Vishay | Mosfet, Dual N Channel, 60V, 5.3A, Soic-8; Transistor Polarity Vishay |
| Package Type | SO-8; SO-8 | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | TO-3 | TO-3 | ||
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
