N-Channel JFET, 60V, 4.3A ID, 58mR Rds On, SOIC-8 Product overview: SI4900DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 4.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4900DY-T1-E3 can be used for catalog matching and distributor lookup.
Dual N-Ch MOSFET SO-8 60V 58mohm @ 10V
Dual N-Ch MOSFET SO-8 60V 58mohm @ 10V
Dual N-Ch MOSFET SO-8 60V 58mohm @ 10V
Manufacturer: Vishay Siliconix
Win Source Part Number: 794278-SI4900DY-T1-E
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 5.3A
Power - Max: 3.1W
Family Name: Si4900DY
Categories: Discrete Semiconductor Products
Manufacturer Package: 8-SO
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 665pF @ 15V
Rds On (Maximum) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
Alternative Parts (Cross-Reference): FW297-TL-2W; KMB4D5DN60QA; AO4828; HAT2038R-EL;
Introduction Date: January 16, 2006
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
MOSFET 2N-CH 60V 5.3A 8SOIC
DUAL N CHANNEL MOSFET, 60V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; On Resistance Rds(on):0.072ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 60V, 5.3A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; On Resistance Rds(on):0.046ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4900DY-T1-E3 | 1808002 | 794278-SI4900DY-T1-E3 | SI4900DY-T1-E3CT-ND | SI4900DY-T1-E3 | SI4900DY-T1-E3 | 51K6968 | 09X6438 |
| Product Name | N-Channel 60V 4.3A SOIC MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4900DY-T1-E3 | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N Channel Mosfet, 60V, Soic, Full Reel; Transistor Polarity Vishay | Mosfet, Dual N Channel, 60V, 5.3A, Soic-8; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| PD | 3100 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SO-8; SO-8 | SOT3 | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | TO-3 |
