MOSFET 2N-CH 30V 5.7A 8-SOIC Product overview: SI4830ADY-T1-E3-S from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.7A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4830ADY-T1-E3-
Manufacturer: Vishay
Win Source Part Number: 189979-SI4830ADY-T1-
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Arrays
Series: LITTLE FOOT
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package: 8-SO
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250μA
Gate Charge (Qg) @ Vgs: 11nC @ 4.5V
Power - Max: 1.1W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-SI4830ADY-T1-E3-S | 189979-SI4830ADY-T1-E3-S |
| Product Name | 30V 5.7A SOIC MOSFET Transistor | Discrete Semiconductor Products |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
