The Si4800BDY-T1-E3 is an N-channel MOSFET in an SO-8 package, designed for high-efficiency PWM applications. It has a drain-source voltage rating of 30 V, a continuous drain current of 6.5 A at 70 °C, and a typical on-state resistance of 0.0185 Ω at 10 V gate-source voltage. The device supports 100% UIS and Rg testing, features a junction temperature range of -55 °C to 150 °C, and meets IEC 61249-2-21 halogen-free requirements. Thermal resistance is 70 °C/W junction-to-ambient in steady state when surface-mounted on FR4. It is lead-free and complies with RoHS standards.
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V; Power Dissipation:1.3W; No. of Pins:8Pins RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 28AC2144 |
| Product Name | Channel Type Vishay |
| Package Type | TO-3 |
