Manufacturer: Vishay
Win Source Part Number: 064517-SI4778DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 680pF @ 13V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
N-Channel 25V 8A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
MOSFET N-CH 25V 8A 8SO
MOSFET N-CH 25V 8A 8-SOIC
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 064517-SI4778DY-T1-GE3 | SI4778DY-T1-GE3TR-ND | SI4778DY-T1-GE3 | 880-SI4778DY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4778DY-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 25V 8A 8-SOIC |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 25 volts | 25 volts | ||
| PD | 2400 to 5000 milliwatts | 2400 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 680 pF @ 13 V |
