Vishay Intertechnology, Inc. MOSFET SI4736DY-T1-GE3

N-Channel 30-V MOSFET with an integrated Schottky diode in an SO-8 package, designed for synchronous rectifier applications in DC/DC converters. The device has a drain-source on-state resistance of 0.0095 Ω at 10 V gate-source voltage and 0.0105 Ω at 4.5 V, with a continuous drain current rating of 13 A at 25 °C and 9 A at 70 °C. The integrated Schottky diode has a forward voltage of 0.53 V at 3.0 A. It is compliant with RoHS Directive 2002/95/EC and halogen-free per IEC 61249-2-21. Maximum junction temperature is 150 °C, with a thermal resistance of 70 °C/W from junction to ambient in steady state.