Vishay Intertechnology, Inc. MOSFET SI4662DY-T1-E3

Description
MOSFET 30V 18.6A 6.25W
Description
MOSFET 30V 18.6A 6.25W
Datasheet
Datasheet Summary
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N-Channel 30-V (D-S) MOSFET in an SO-8 package, rated for a continuous drain current of 18.6 A at 25°C case temperature and 12.9 A at 25°C ambient temperature, with a drain-source on-state resistance of 0.010 Ω at 10 V gate-source voltage and 0.014 Ω at 4.5 V gate-source voltage. The device is halogen-free per IEC 61249-2-21, tested for 100% Rds(on) and UIS, and operates from -55°C to 150°C. It meets RoHS and IEC 61249-2-21 standards.

Datasheet Summary
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N-Channel 30-V (D-S) MOSFET in an SO-8 package, rated for a continuous drain current of 18.6 A at 25°C case temperature and 12.9 A at 25°C ambient temperature, with a drain-source on-state resistance of 0.010 Ω at 10 V gate-source voltage and 0.014 Ω at 4.5 V gate-source voltage. The device is halogen-free per IEC 61249-2-21, tested for 100% Rds(on) and UIS, and operates from -55°C to 150°C. It meets RoHS and IEC 61249-2-21 standards.

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Sheung Wan, Hong Kong
MOSFET 30V 18.6A 6.25W

MOSFET 30V 18.6A 6.25W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4662DY-T1-E3
Product Name MOSFET
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