Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4660DY-T1-GE3 SI4660DY-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 1095976-SI4660DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 23.1A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2410pF @ 15V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 5.8 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

MOSFET N-CH 25V 23.1A 8SO Product overview: SI4660DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 23.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 23.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4660DY-T1-GE3 can be used for catalog matching and distributor lookup.