Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4539ADY-T1-E3 SI4539ADY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028511-SI4539ADY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.4A, 3.7A Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 20nC @ 10V Maximum Rds On at Id,Vgs: 36 mOhm @ 5.9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 028511-SI4539ADY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.4A, 3.7A Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 20nC @ 10V Maximum Rds On at Id,Vgs: 36 mOhm @ 5.9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4539ADY-T1-E3 - 028511-SI4539ADY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4539ADY-T1-E3
028511-SI4539ADY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4539ADY-T1-E3 028511-SI4539ADY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028511-SI4539ADY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.4A, 3.7A Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 20nC @ 10V Maximum Rds On at Id,Vgs: 36 mOhm @ 5.9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028511-SI4539ADY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.4A, 3.7A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 20nC @ 10V
Maximum Rds On at Id,Vgs: 36 mOhm @ 5.9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 30V 3.7A MOSFET Transistor
278-SI4539ADY-T1-E3
N-Channel 30V 3.7A MOSFET Transistor 278-SI4539ADY-T1-E3
30V N-Channel MOSFET, 3.7A, 36mR Rds On, SO Package Product overview: SI4539ADY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4539ADY-T1-E3 can be used for catalog matching and distributor lookup.

30V N-Channel MOSFET, 3.7A, 36mR Rds On, SO Package Product overview: SI4539ADY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4539ADY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4539ADY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4539ADY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4539ADY-T1-E3
MOSFET N/P-CH 30V 4.4A 8SOIC

MOSFET N/P-CH 30V 4.4A 8SOIC

Supplier's Site
MOSFET 30V 5.9/4.9A 2W - 880-SI4539ADY-T1-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 30V 5.9/4.9A 2W
880-SI4539ADY-T1-E3
MOSFET 30V 5.9/4.9A 2W 880-SI4539ADY-T1-E3
MOSFET 30V 5.9/4.9A 2W

MOSFET 30V 5.9/4.9A 2W

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028511-SI4539ADY-T1-E3 278-SI4539ADY-T1-E3 SI4539ADY-T1-E3 880-SI4539ADY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4539ADY-T1-E3 N-Channel 30V 3.7A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET 30V 5.9/4.9A 2W
Polarity P-Channel N-Channel; P-Channel
V(BR)DSS 30 volts 30 volts
PD 1100 milliwatts 1100 milliwatts 1100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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