Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4483EDY-T1-E3 SI4483EDY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 123670-SI4483EDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 123670-SI4483EDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4483EDY-T1-E3 - 123670-SI4483EDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4483EDY-T1-E3
123670-SI4483EDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4483EDY-T1-E3 123670-SI4483EDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 123670-SI4483EDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 123670-SI4483EDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4483EDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4483EDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4483EDY-T1-E3
MOSFET P-CH 30V 10A 8SO

MOSFET P-CH 30V 10A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 123670-SI4483EDY-T1-E3 SI4483EDY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4483EDY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 30 volts
PD 1500 milliwatts
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