Vishay Intertechnology, Inc. N-Channel MOSFET Transistor SI4480DY-T1

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Product overview: SI4480DY-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI4480DY-T1 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092856-SI4480DY-T1
Current Rating: 6 A
Length: 5 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 80 V
Number of Elements: 1
Power Dissipation: 2.5 W
Height: 1.55 mm
Weight: 186.993455 mg
Number of Channels: 1
Number of Pins: 8
Width: 4 mm
Rise Time: 12.5 ns
Fall Time: 22 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SO
Alternative Parts (Cross-Reference): SI4480DY-T1SI4480DYT1;
Popularity: Low
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 2.5 W
Turn-On Delay Time: 12.5 ns
Continuous Drain Current (ID): 6 A
Drain to Source Breakdown Voltage: 80 V
Turn-Off Delay Time: 52 ns
Drain to Source Resistance: 35 mΩ
Gate to Source Voltage (Vgs): 20 V