Manufacturer: Vishay Siliconix
Win Source Part Number: 794257-SI4465ADY-T1-
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Technology: MOSFET
Family Name: Si4465ADY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Manufacturer Package: 8-SO
Channel Type Type: P
Drain Source Voltage: 8V
Vgs(th) (Maximum) @ Id: 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 85nC @ 4.5V
Vgs (Maximum): ±8V
Power Dissipation (Maximum): 3W (Ta), 6.5W (Tc)
Rds On (Maximum) @ Id, Vgs: 9 mOhm @ 14A, 4.5V
Introduction Date: July 24, 2006
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
MOSFET P-CH 8V 8SOIC
P-Channel 8V 13.7A (Ta), 20A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC
P-Channel 8V 13.7A (Ta), 20A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC
P-CH MOSFET, 8V, 20A, 9mR, SO, Surface Mount Product overview: SI4465ADY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 8V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 8V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4465ADY-T1-GE3
P CHANNEL MOSFET, -8V, 13.7A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:13.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.8V; Gate Source Threshold Voltage Max:450mV RoHS Compliant: Yes
P CHANNEL MOSFET, -8V, 13.7A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:13.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.8V; Gate Source Threshold Voltage Max:450mV RoHS Compliant: Yes
MOSFET P-CH 8V 8SOIC
MOSFET 8.0V 13.7A 3.0W 9.0mohm @ 4.5V
MOSFET 8.0V 13.7A 3.0W 9.0mohm @ 4.5V
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 794257-SI4465ADY-T1-GE3 | SI4465ADY-T1-GE3 | SI4465ADY-T1-GE3TR-ND | 278-SI4465ADY-T1-GE3 | 26R1880 | SI4465ADY-T1-GE3 | SI4465ADY-T1-GE3 | 880-SI4465ADY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4465ADY-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | SMD 8V 20A MOSFET Transistor | P Channel Mosfet, -8V, 13.7A, Soic; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET 8.0V 13.7A 3.0W 9.0mohm @ 4.5V |
| PD | 3000 to 6500 milliwatts | 3000 milliwatts | 3000 milliwatts | 3000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | 8-SOIC (0.154, 3.90mm Width) | |||
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) | |||||
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel |
