P-CH MOSFET, -40V, 3.3A, 54mR Rds On, SOIC Product overview: SI4447DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -40V, 3.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -40V, 3.3A, SOIC, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4447DY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028494-SI4447DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Family Name: Si4447DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 3.3A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 805pF @ 20V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 72 mOhm @ 4.5A, 15V
Alternative Parts (Cross-Reference): AP9566GM-HF; TPC8134; TPC8134,LQ(S; Si4447ADY-T1-GE3;
Introduction Date: March 07, 2006
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SOIC
P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SOIC
P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SOIC
MOSFET 40V 4.5A 2.0W 54mohm @ 10V
MOSFET P-CH 40V 3.3A 8SO
P CHANNEL MOSFET, -40V, 4.5A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:16V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes
MOSFET P-CH 40V 3.3A 8SO
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-SI4447DY-T1-E3 | 028494-SI4447DY-T1-E3 | SI4447DY-T1-E3DKR-ND | SI4447DY-T1-E3 | SI4447DY-T1-E3 | 75M5471 | SI4447DY-T1-E3 |
| Product Name | -40V 3.3A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4447DY-T1-E3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -40V, 4.5A, Soic; Channel Type Vishay | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||
| PD | 1100 milliwatts | 1100 milliwatts | 1100 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 40 volts | 40 volts |
